stietchback

由CHLi著作·2002·被引用10次—Inthispaper,theeffectofSiNpull-backprocessforshallowtrenchisolation(STI)isinvestigatedbymeasuringDRAMarray'srefreshtime(Tref)and ...,Downloadscientificdiagram|CrosssectionofareversetoneetchbackSTIstructureshowingnitrideerosionandstepheightafterCMP.frompublication: ...,Amethodformanufacturingshallowtrenchisolation(STI)structuresinsemiconductordevicemanufacturinginclud...

參考資訊如下
A robust shallow trench isolation (STI) with SiN pull

由 CH Li 著作 · 2002 · 被引用 10 次 — In this paper, the effect of SiN pull-back process for shallow trench isolation (STI) is investigated by measuring DRAM array's refresh time (Tref) and ...

Cross section of a reverse tone etchback STI ...

Download scientific diagram | Cross section of a reverse tone etchback STI structure showing nitride erosion and step height after CMP. from publication: ...

Method for protecting STI structures with low ...

A method for manufacturing shallow trench isolation (STI) structures in semiconductor device manufacturing including a method for minimizing divot formation ...

New Dry Etch

2003年6月19日 — Disclosed is a dry etch process designed to improve the quality of the shallow trench isolation planarization used for advanced ...

Plasma etch

2000年7月1日 — A new plasma etch-back planarization technique is presented with countermasking to preplanarize shallow trench isolation (STI) substrates ...

Shallow trench isolation

Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between ...

工學院半導體材料與製程設備學程碩士論文

由 嚴永民 著作 · 2011 — Shallow Trench Isolation (STI) techniques are essential for semiconductor device for reducing electrical interferences between devices of sub-micro and sub 100- ...

淺溝渠元件隔離技術現況與挑戰

... STI)為先進IC奈米晶片製程中的關鍵技. 術。以化學機械研磨技術進行溝渠隔離氧化矽之回蝕面臨相當嚴苛的製程要求。目前. 以反罩幕回蝕(Reverse Mask Etch-back, RME)或以 ...